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 STC03DE220HP
Preliminary Data
Features
Table 1.
VCS(ON) 1V

.
Features
IC 3A RCS(ON) 0.33
Low equivalent on resistance Very fast-switch, up to 150 kHz Very low CISS driven by RG = 4.7 TO247-4L HP
Applications
Aux SMPS for three phase mains
Figure 1.
Internal schematic diagrams
Description
The STC03DE220HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE220HP is designed for use in aux flyback SMPS for any three phase application.
Table 2.
Device summary
Marking C03DE220HP Package TO247-4L HP Packaging Tube
Order code STC03DE220HP
May 2008
Rev 1
1/7
www.st.com 7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
W
Hybrid emitter switched bipolar transistor ESBT(R) 2200 V - 3 A - 0.33
Electrical ratings
STC03DE220HP
1
Electrical ratings
Table 3.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum ratings
Parameter Collector-source voltage (V BS = VGS =0) Base-source voltage (IC = 0, VGS = 0) Source-base voltage (IC = 0, VGS = 0) Gate-source voltage Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 1 ms) Total dissipation at Tc 25 C Storage temperature Max. operating junction temperature Value 2200 30 9 Unit V V V V A A A A W C C
20
3 6 3 6 tbd -40 to 150 125
Table 4.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case max Value tbd Unit C/W
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STC03DE220HP
Electrical characteristics
2
Electrical characteristics
(Tcase = 25 C; unless otherwise specified) Table 5.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS)
Electrical characteristics
Parameter Test conditions Min. Typ. Max. 100 Unit A
Collector-source = 2200 V V current (V BS =VGS = 0) CS(SS) Base-source current (IC =0, VGS = 0) Source-base current (IC =0, VGS = 0) Gate-source leakage (V BS = 0) Collector-source ON voltage DC current gain Base-source ON voltage VBS(OS) = 30 V VSB(OS) = 9 V VGS = 20 V VGS = 10 V IC = 1.5 A IB = 0.15 A VGS = 10 V IC = 3 A IB = 0.6 A 0.2 0.25 15 10 0.82 1 1.5 2.2 750
10
A
100
A
500
nA V V
VCS(ON)
hFE
VCS = 1 V VGS =10 V IC =1.5 A VCS = 1 V VGS =10 V IC =3 A VGS = 10 V IC = 1.5 A IB = 0.15 A IB = 0.6 A VGS =10 V IC =3 A IB = 250 A f = 1 MHz VGS = 10 V RG = 47 tp = 4 s IB = 0.3 A
VBS(ON) VGS(th) Ciss
V V 3 V pF
Gate threshold voltage VBS = VGS Input capacitance (VGS = VCB = 0) Gate-source Charge (V CB = 0) INDUCTIVE LOAD Storage time Fall time VCS = 25 V VCS =15 V IC = 1.8 A VGS = 10 V
QGS(tot)
12.5
nC
ts tf
VClamp = 1760 V IC = 1.5 A VCC = V Clamp = 400 V
1040 20
ns ns
VCS(dyn)
Collector-source dynamic voltage (500 ns)
VGS = 10 V IB = 0.3 A tpeak = 500 ns
IC = 1.5 A RG = 47 IBpeak = 3 A
7.6
V
VCC = V Clamp = 400 V VCS(dyn) Collector-source dynamic voltage (1 s) Maximum collectorsource voltage switched without snubber VGS = 10 V IB = 0.3 A tpeak = 500 ns IC = 1.5 A RG = 47 IBpeak = 3 A 5.8 V
VCSW
RG = 47
hFE = 5
IC = 3 A
2200
V
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Package mechanical data
STC03DE220HP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com
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STC03DE220HP
Package mechanical data
TO247-4L HP mechanical data
DIM. A A1 A2 A3 b b1 b2 c D D1 E e e1 L L1 L2 L3 oP S
MIN. 5.50 2.85
0.95 1.10 2.50 0.40 23.85 15.45
mm. TYP 5.65 3.15 1.92 3.18 1.10
MAX. 5.80 3.25
24 21.50 15.60 2.54 5.08 2.50 18.50 3 5.50
1.30 1.50 2.90 0.80 24.15 15.75
10.20 2.20
10.80 2.80
3.55
3.65
7908765A
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Revision history
STC03DE220HP
4
Table 6.
Revision history
Document revision history
Revision 1 First release. Changes
Date 19-May-2008
6/7
STC03DE220HP
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